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RN4989FE,LF(CT

Hersteller: Toshiba Semiconductor and Storage
Produktkategorie: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datenblatt: RN4989FE,LF(CT
Beschreibung: NPN + PNP BRT Q1BSR47KOHM Q1BER2
RoHS-Status: RoHS-konform
Attribut Attributwert
Hersteller Toshiba Semiconductor and Storage
Produktkategorie Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Serie *
Teilstatus Active

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