RN2507(TE85L,F)
Hersteller: | Toshiba Semiconductor and Storage |
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Produktkategorie: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Datenblatt: | RN2507(TE85L,F) |
Beschreibung: | TRANS 2PNP PREBIAS 0.3W SMV |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
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Hersteller | Toshiba Semiconductor and Storage |
Produktkategorie | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Serie | - |
Verpackung | Tape & Reel (TR) |
Teilstatus | Active |
Leistung - Max | 300mW |
Montagetyp | Surface Mount |
Paket / Fall | SC-74A, SOT-753 |
Transistortyp | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Widerstand - Basis (R1) | 10kOhms |
Frequenz - Übergang | 200MHz |
Lieferanten-Gerätepaket | SMV |
Widerstand - Emitter-Basis (R2) | 47kOhms |
Vce Sättigung (Max.) | 300mV @ 250µA, 5mA |
Strom - Kollektor (Ic) (Max) | 100mA |
Strom - Collector Cutoff (Max) | 100nA (ICBO) |
Gleichstromverstärkung (hFE) (Min) | 80 @ 10mA, 5V |
Spannung - Kollektor Emitter Aufschlüsselung (Max) | 50V |
Auf Lager 52 pcs
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
---|---|---|---|
$0.09 | $0.09 | $0.09 |
Minimale: 1