RN2413TE85LF
Hersteller: | Toshiba Semiconductor and Storage |
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Produktkategorie: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Datenblatt: | RN2413TE85LF |
Beschreibung: | TRANS PREBIAS PNP 0.2W SMINI |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
---|---|
Hersteller | Toshiba Semiconductor and Storage |
Produktkategorie | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Serie | - |
Verpackung | Digi-Reel® |
Teilstatus | Discontinued at Digi-Key |
Leistung - Max | 200mW |
Montagetyp | Surface Mount |
Paket / Fall | TO-236-3, SC-59, SOT-23-3 |
Transistortyp | PNP - Pre-Biased |
Widerstand - Basis (R1) | 47 kOhms |
Frequenz - Übergang | 200MHz |
Lieferanten-Gerätepaket | S-Mini |
Vce Sättigung (Max.) | 300mV @ 250µA, 5mA |
Strom - Kollektor (Ic) (Max) | 100mA |
Strom - Collector Cutoff (Max) | 100nA (ICBO) |
Gleichstromverstärkung (hFE) (Min) | 120 @ 1mA, 5V |
Spannung - Kollektor Emitter Aufschlüsselung (Max) | 50V |
Auf Lager 60 pcs
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
Minimale: 1