RN1909FE(TE85L,F)
Hersteller: | Toshiba Semiconductor and Storage |
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Produktkategorie: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Datenblatt: | RN1909FE(TE85L,F) |
Beschreibung: | TRANS 2NPN PREBIAS 0.1W ES6 |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
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Hersteller | Toshiba Semiconductor and Storage |
Produktkategorie | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Serie | - |
Verpackung | Digi-Reel® |
Teilstatus | Active |
Leistung - Max | 100mW |
Montagetyp | Surface Mount |
Paket / Fall | SOT-563, SOT-666 |
Transistortyp | 2 NPN - Pre-Biased (Dual) |
Widerstand - Basis (R1) | 47kOhms |
Frequenz - Übergang | 250MHz |
Lieferanten-Gerätepaket | ES6 |
Widerstand - Emitter-Basis (R2) | 22kOhms |
Vce Sättigung (Max.) | 300mV @ 250µA, 5mA |
Strom - Kollektor (Ic) (Max) | 100mA |
Strom - Collector Cutoff (Max) | 100nA (ICBO) |
Gleichstromverstärkung (hFE) (Min) | 70 @ 10mA, 5V |
Spannung - Kollektor Emitter Aufschlüsselung (Max) | 50V |
Auf Lager 3950 pcs
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
Minimale: 1