RN1109CT(TPL3)
Hersteller: | Toshiba Semiconductor and Storage |
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Produktkategorie: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Datenblatt: | RN1109CT(TPL3) |
Beschreibung: | TRANS PREBIAS NPN 0.05W CST3 |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
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Hersteller | Toshiba Semiconductor and Storage |
Produktkategorie | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Serie | - |
Verpackung | Cut Tape (CT) |
Teilstatus | Obsolete |
Leistung - Max | 50mW |
Montagetyp | Surface Mount |
Paket / Fall | SC-101, SOT-883 |
Transistortyp | NPN - Pre-Biased |
Widerstand - Basis (R1) | 47 kOhms |
Lieferanten-Gerätepaket | CST3 |
Widerstand - Emitter-Basis (R2) | 22 kOhms |
Vce Sättigung (Max.) | 150mV @ 250µA, 5mA |
Strom - Kollektor (Ic) (Max) | 50mA |
Strom - Collector Cutoff (Max) | 500nA |
Gleichstromverstärkung (hFE) (Min) | 100 @ 10mA, 5V |
Spannung - Kollektor Emitter Aufschlüsselung (Max) | 20V |
Auf Lager 63 pcs
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
Minimale: 1