RN1102MFV,L3F
Hersteller: | Toshiba Semiconductor and Storage |
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Produktkategorie: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Datenblatt: | RN1102MFV,L3F |
Beschreibung: | TRANS PREBIAS NPN 50V 0.15W VESM |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
---|---|
Hersteller | Toshiba Semiconductor and Storage |
Produktkategorie | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Serie | - |
Verpackung | Digi-Reel® |
Teilstatus | Active |
Leistung - Max | 150mW |
Montagetyp | Surface Mount |
Paket / Fall | SOT-723 |
Transistortyp | NPN - Pre-Biased |
Widerstand - Basis (R1) | 10 kOhms |
Lieferanten-Gerätepaket | VESM |
Widerstand - Emitter-Basis (R2) | 10 kOhms |
Vce Sättigung (Max.) | 300mV @ 500µA, 5mA |
Strom - Kollektor (Ic) (Max) | 100mA |
Strom - Collector Cutoff (Max) | 500nA |
Gleichstromverstärkung (hFE) (Min) | 50 @ 10mA, 5V |
Spannung - Kollektor Emitter Aufschlüsselung (Max) | 50V |
Auf Lager 7824 pcs
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
Minimale: 1