EMD29T2R
Hersteller: | ROHM Semiconductor |
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Produktkategorie: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Datenblatt: | EMD29T2R |
Beschreibung: | TRANS NPN/PNP PREBIAS 0.12W EMT6 |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
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Hersteller | ROHM Semiconductor |
Produktkategorie | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Serie | - |
Verpackung | Digi-Reel® |
Teilstatus | Active |
Leistung - Max | 120mW |
Montagetyp | Surface Mount |
Paket / Fall | SOT-563, SOT-666 |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Basis-Teilenummer | *MD29 |
Widerstand - Basis (R1) | 1kOhms, 10kOhms |
Frequenz - Übergang | 250MHz, 260MHz |
Lieferanten-Gerätepaket | EMT6 |
Widerstand - Emitter-Basis (R2) | 10kOhms |
Vce Sättigung (Max.) | 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA |
Strom - Kollektor (Ic) (Max) | 100mA, 500mA |
Strom - Collector Cutoff (Max) | 500nA |
Gleichstromverstärkung (hFE) (Min) | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
Spannung - Kollektor Emitter Aufschlüsselung (Max) | 50V, 12V |
Auf Lager 3728 pcs
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
Minimale: 1