NSVTB60BDW1T1G
Hersteller: | ON Semiconductor |
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Produktkategorie: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Datenblatt: | NSVTB60BDW1T1G |
Beschreibung: | TRANS NPN/PNP COMBO SC88-6 |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
---|---|
Hersteller | ON Semiconductor |
Produktkategorie | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Serie | Automotive, AEC-Q101 |
Verpackung | Tape & Reel (TR) |
Teilstatus | Active |
Leistung - Max | 250mW |
Montagetyp | Surface Mount |
Paket / Fall | 6-TSSOP, SC-88, SOT-363 |
Transistortyp | 1 NPN Pre-Biased, 1 PNP |
Widerstand - Basis (R1) | 22kOhms |
Frequenz - Übergang | - |
Lieferanten-Gerätepaket | SC-88/SC70-6/SOT-363 |
Widerstand - Emitter-Basis (R2) | 47kOhms |
Vce Sättigung (Max.) | 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA |
Strom - Kollektor (Ic) (Max) | 150mA |
Strom - Collector Cutoff (Max) | 500nA |
Gleichstromverstärkung (hFE) (Min) | 80 @ 5mA, 10V / 120 @ 5mA, 10V |
Spannung - Kollektor Emitter Aufschlüsselung (Max) | 50V |
Auf Lager 72 pcs
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
---|---|---|---|
$0.11 | $0.11 | $0.11 |
Minimale: 1