MUN5332DW1T1G
Hersteller: | ON Semiconductor |
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Produktkategorie: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Datenblatt: | MUN5332DW1T1G |
Beschreibung: | TRANS PREBIAS NPN/PNP SOT363 |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
---|---|
Hersteller | ON Semiconductor |
Produktkategorie | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Serie | - |
Verpackung | Tape & Reel (TR) |
Teilstatus | Obsolete |
Leistung - Max | 250mW |
Montagetyp | Surface Mount |
Paket / Fall | 6-TSSOP, SC-88, SOT-363 |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Basis-Teilenummer | MUN53**DW1 |
Widerstand - Basis (R1) | 4.7kOhms |
Frequenz - Übergang | - |
Lieferanten-Gerätepaket | SC-88/SC70-6/SOT-363 |
Widerstand - Emitter-Basis (R2) | 4.7kOhms |
Vce Sättigung (Max.) | 250mV @ 1mA, 10mA |
Strom - Kollektor (Ic) (Max) | 100mA |
Strom - Collector Cutoff (Max) | 500nA |
Gleichstromverstärkung (hFE) (Min) | 15 @ 5mA, 10V |
Spannung - Kollektor Emitter Aufschlüsselung (Max) | 50V |
Auf Lager 69 pcs
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
Minimale: 1