BCR503E6393HTSA1
Hersteller: | Infineon Technologies |
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Produktkategorie: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Datenblatt: | BCR503E6393HTSA1 |
Beschreibung: | TRANS PREBIAS PNP SOT23 |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
---|---|
Hersteller | Infineon Technologies |
Produktkategorie | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Serie | - |
Verpackung | Tape & Reel (TR) |
Teilstatus | Last Time Buy |
Leistung - Max | 330mW |
Montagetyp | Surface Mount |
Paket / Fall | TO-236-3, SC-59, SOT-23-3 |
Transistortyp | NPN - Pre-Biased |
Widerstand - Basis (R1) | 2.2 kOhms |
Frequenz - Übergang | 100MHz |
Lieferanten-Gerätepaket | SOT-23-3 |
Widerstand - Emitter-Basis (R2) | 2.2 kOhms |
Vce Sättigung (Max.) | 300mV @ 2.5mA, 50mA |
Strom - Kollektor (Ic) (Max) | 500mA |
Strom - Collector Cutoff (Max) | 100nA (ICBO) |
Gleichstromverstärkung (hFE) (Min) | 40 @ 50mA, 5V |
Spannung - Kollektor Emitter Aufschlüsselung (Max) | 50V |
Auf Lager 66 pcs
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
Minimale: 1